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CS60N06C4 - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS60N06C4
Manufacturer Huajing Microelectronics
File Size 687.54 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS60N06C4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS60N06 C4 ○R General Description： CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance（Rdson≤10mΩ） l Low Gate Charge (Typical Data: 57nC) l Low Reverse transfer capacitances(Typical: 180pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
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