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CS540AR - Silicon N-Channel Power MOSFET

Description

switching performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test 100 V 33 A 150 W 30 mΩ.

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Datasheet Details

Part number CS540AR
Manufacturer Huajing Microelectronics
File Size 523.28 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS540AR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS540 AR ○R General Description： CS540 AR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test 100 V 33 A 150 W 30 mΩ Applications： Automotive、DC Motor Control and Class D Amplifier.
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