Silicon N-Channel Power MOSFET
CS540 AR
○R
General Description:
CS540 AR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The package
form is TO-262, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤44 mΩ)
l Low Gate Charge (Typical Data:37nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
100 V
33 A
150 W
30 mΩ
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
100
33
27
132
±20
750
60
3.5
5.0
150
1.0
175,–55 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
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