Silicon N-Channel Power MOSFET
CS540 AR
○R
General Description：
CS540 AR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The package
form is TO-262, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤44 mΩ)
l Low Gate Charge (Typical Data:37nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
100 V
33 A
150 W
30 mΩ
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
100
33
27
132
±20
750
60
3.5
5.0
150
1.0
175，–55 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
