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CS540A4 - Silicon N-Channel Power MOSFET

General Description

the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS540A4
Manufacturer Huajing Microelectronics
File Size 534.31 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS540A4 Datasheet

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Silicon N-Channel Power MOSFET CS540 A4 ○R General Description: CS540 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 100 33 150 30 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤44 mΩ) l Low Gate Charge (Typical Data:37nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier.