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CS50N20ANH - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS50N20ANH
Manufacturer Huajing Microelectronics
File Size 417.81 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS50N20ANH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P（N）, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.
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