l Fast Switching l Low ON Resistance(Rdson≤4.2 Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche e.

Power switch circuit of adaptor and charger. Absolute（TC= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS E.

VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.8 Ω performance and enhance the aval.

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N30B23H

CS3N40A23

CS3N40A3H

CS3N40A4H

CS3N50B3

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