CS3N60A3 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1 VGS E.
VDSS
600 V
CS3N60 A3 the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.7 Ω
performance and enhance the avalanc.
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