CS3N20ATH mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
200 3 2.5 1.2
l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Singl.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
.
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