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Silicon N-Channel Power MOSFET
○R
CS3710 B8
General Description：
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching
Low ON Resistance(Rdson≤23 mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS3710B8 Datasheet
