CS3710B8 mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤23 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
A.
Power switch circuit of adaptor and charger.
100 V 80 A 250 W 14 mΩ
Absolute（Tj= 25℃ unless otherwise specified）
Sym.
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
can be u.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 846.36KB)