CS3205B8 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ)
l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF)
l 100% Single Pulse avalanch.
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDS.
VDSS
55
V
CS3205 B8, the silicon N-channel Enhanced
ID（Silicon limited current）
120
A
VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃)
230 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
7.6 mΩ
switching per.
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