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CS2N65A3 - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS2N65A3
Manufacturer Huajing Microelectronics
File Size 235.21 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS2N65A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS2N65 A3 ○R General Description： VDSS 650 V CS2N65 A3, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.9 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤5Ω) l Low Gate Charge (Typical Data:9nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.