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CS1N80A4H Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

Datasheet Details

Part number CS1N80A4H
Manufacturer Huajing Microelectronics
File Size 523.10 KB
Description Silicon N-Channel Power MOSFET
Download CS1N80A4H Download (PDF)

General Description

: CS1N80 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-252, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS1N80 A4H ○R General.

Key Features

  • l Fast Switching 800 1 30 12 l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test.