CS1N80A1H Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 3 12 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications：...