CS1N65B3 - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS1N65B3
Manufacturer	Huajing Microelectronics
File Size	524.87 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N65B3 Datasheet
Additional preview pages of the CS1N65B3 datasheet.

Product details

Description

CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |