CS1N65B3 Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS1N65 B3 ○R General Description： CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.5 32 8.5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3n C) l Low Reverse transfer capacitances(Typical:2p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C...