CS1N65A3 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche ene.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
CS1N65 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
650 0.8 20 13.8
performance and enhance the avalanche energy.
Image gallery
TAGS
Download (Size : 532.93KB)