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Silicon N-Channel Power MOSFET
CS1N65 A1
○R
General Description：
VDSS
650 V
CS1N65 A1, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
13.8 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-92,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS1N65A1 Datasheet
