CS1N65A1 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS1N65A1
Manufacturer	Huajing Microelectronics
File Size	539.53 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS1N65A1-HuajingMicroelectronics.pdf

CS1N65A1 Product details

Description

VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 13.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |