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CS1N60B3R - Silicon N-Channel Power MOSFET

The CS1N60B3R by Huajing Microelectronics is a Silicon N-Channel Power MOSFET. Below is the official datasheet preview.

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Official preview page of the CS1N60B3R Silicon N-Channel Power MOSFET datasheet (Huajing Microelectronics).

Datasheet Details

Part number CS1N60B3R
Manufacturer Huajing Microelectronics
File Size 0.97 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N60B3R-HuajingMicroelectronics.pdf
Additional preview pages of the CS1N60B3R datasheet.

CS1N60B3R Product details

Description

CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32 7 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

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