CS1N60B3R Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS1N60 B3R ○R General Description： CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32 7 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2n C) l Low Reverse transfer capacitances(Typical:2p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed...