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CS1N60B3R Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

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Datasheet Details

Part number CS1N60B3R
Manufacturer Huajing Microelectronics
File Size 0.97 MB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS1N60B3R Datasheet

General Description

： CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 32 7 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS1N60 B3R ○R General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test.

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