Silicon N-Channel Power MOSFET
CS1N60 A3H
○R
General Description：
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤15Ω)
l Low Gate Charge (Typical Data:4nC)
l Low Reverse transfer capacitances(Typical:2.6pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
0.8
0.6
3.2
±30
20
6
1.1
5
25
0.2
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
