CS1N60A3H datasheet by Huajing Microelectronics.
| Part number | CS1N60A3H |
|---|---|
| Datasheet | CS1N60A3H-HuajingMicroelectronics.pdf |
| File Size | 532.36 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the...
View all Huajing Microelectronics datasheets
| Part Number | Description |
|---|---|
| CS1N60A1H | Silicon N-Channel Power MOSFET |
| CS1N60B1R | Silicon N-Channel Power MOSFET |
| CS1N60B3R | Silicon N-Channel Power MOSFET |
| CS1N60C1H | Silicon N-Channel Power MOSFET |
| CS1N60C1HD | Silicon N-Channel Power MOSFET |
| CS1N60C3H | Silicon N-Channel Power MOSFET |
| CS1N60F | VDMOS |
| CS1N65A1 | Silicon N-Channel Power MOSFET |
| CS1N65A3 | Silicon N-Channel Power MOSFET |
| CS1N65B1 | Silicon N-Channel Power MOSFET |
