CS1N60A3H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche en.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID.
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω
performance and enhance the ava.
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