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CS19N40A8H Datasheet - Huajing Microelectronics

CS19N40A8H Silicon N-Channel Power MOSFET

CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 19 180 0.18 performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS19N40A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.24Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 37pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS19N40A8H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS19N40A8H

Manufacturer:

Huajing Microelectronics

File Size:

425.80 KB

Description:

Silicon n-channel power mosfet.

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