CS19N40A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.24Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 37pF) l 100% Single Pulse avalanche .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
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CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
400 19 180 0.18
performance and enhance the avalanche energy.
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