CS16N65A8H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.55Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanch.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
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CS16N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 16 180 0.49
performance and enhance the avalanche energ.
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