CS16N65A8H Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS16N65 A8H ○R General Description： CS16N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 16 180 0.49 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the Ro HS standard.. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.55Ω) l Low Gate Charge (Typical Data:54n C) l Low Reverse transfer capacitances(Typical: 18.5p F) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS IDMa1 VGS EAS a2 dv/dt a3 TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed...