Silicon N-Channel Power MOSFET
CS16N65 A8H
○R
General Description：
CS16N65 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650
16
180
0.49
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.55Ω)
l Low Gate Charge (Typical Data:54nC)
l Low Reverse transfer capacitances(Typical: 18.5pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
16
11.5
64
±30
800
5.0
180
1.44
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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