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Huajing Microelectronics

CS15N50FA9R Datasheet Preview

CS15N50FA9R Datasheet

Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET
CS15N50F A9R
R
General Description
CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and
VDSS
ID
PD(TC=25)
RDS(ON)Typ
500
15
70
0.3
enhance the avalanche energy. The transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson0.4)
l Low Gate Charge (Typical Data:50nC)
l Low Reverse transfer capacitances(Typical:25.5pF)
l 100% Single Pulse avalanche energy Test
Applications
AutomotiveDC Motor Control and Class D Amplifier.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
500
15
9.5
60
±30
1000
200
6.3
5.0
70
0.56
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01




Huajing Microelectronics

CS15N50FA9R Datasheet Preview

CS15N50FA9R Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

CS15N50F A9R
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 500V, VGS= 0V,
Ta = 25
VDS =400V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp380µs,δ≤2%
Test Conditions
VGS=10V,ID=7.5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =7.5A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =15A VDD =250V
VGS = 10V RG =6.1
ID =15A VDD =250V
VGS = 10V
Rating
Min. Typ. Max.
500 -- --
-- 0.6 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
Rating
Min. Typ. Max.
-- 0.3 0.4
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 18 --
-- 2400 --
-- 235 --
-- 25.5 --
Units
S
pF
Rating
Min. Typ. Max.
-- 15 --
-- 30 --
-- 50 --
-- 40 --
-- 50
-- 12 --
-- 20 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01


Part Number CS15N50FA9R
Description Silicon N-Channel Power MOSFET
Maker Huajing Microelectronics
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