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Huajing Microelectronics

CS150N04A8 Datasheet Preview

CS150N04A8 Datasheet

Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET
CS150N04 A8
R
General Description
CS150N04 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson4.5mType4m)
l High Power and Current Handing Capability
l Low Reverse transfer Capacitances(Typical:480pF)
l 100% Single Pulse avalanche energy Test
Applications
UPS,Inverter,Lighting.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS
EAS a2
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
PD
TJTstg
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
TL MaximumTemperature for Soldering
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
VDSS
ID
PD (TC=25)
RDS(ON)Typ
Rating
40
150
90
600
±30
100
15
150
1.2
55 to 150
300
Typ.
0.83
100
40 V
150 A
100 W
4 m
Units
V
A
A
A
V
mJ
V/ns
W
W/
Units
/W
/W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 7 2 015V01




Huajing Microelectronics

CS150N04A8 Datasheet Preview

CS150N04A8 Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

CS150N04 A8
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage VGS=0V, ID=250µA
vdss Temperature Coefficient
ID=250uA,Reference25
Drain to Source Leakage Current
VDS = 40V, VGS= 0V,Ta = 25
VDS =32V, VGS= 0V,Ta = 150
Gate to Source Forward Leakage
VGS =+30V
Gate to Source Reverse Leakage
VGS =-30V
Rating
Units
Min Typ. Max.
40 -- -- V
-- 0.035 -- V/
-- -- 1
µA
-- -- 500
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
gfs Forward Transconductance
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=50A
VDS = VGS, ID = 250µA
VDS=10V, ID =50A
Rating
Units
Min. Typ. Max.
-- 4 4.5 m
2.0 3.5 V
-- 320 --
S
Dynamic Characteristics
Symbol
Rg
Ciss
Coss
Crss
Parameter
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS=0V, f = 1.0MHz
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =150A VDD = 30V
VGS = 10V RG = 10
ID =20A VDD =32V
VGS = 10V
Rating
Units
Min. Typ. Max.
-- 1 --
-- 8900 --
-- 550 -- pF
-- 480 --
Rating
Units
Min. Typ. Max.
-- 48 --
-- 88 --
-- 170 -- ns
-- 62 --
-- 160
-- 42 -- nC
-- 33 --
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 7 2 015V01


Part Number CS150N04A8
Description Silicon N-Channel Power MOSFET
Maker Huajing Microelectronics
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