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CS14N10A3 - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

suitable for use as a load switch and PWM applications.

Features

  • l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS14N10A3
Manufacturer Huajing Microelectronics
File Size 456.18 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS14N10A3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 14 A 43.
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