CS14N10A3
CS14N10A3 is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Description
：
CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
100 V 14 A 43.1 W 113 mΩ
Absolute（TC= 25℃ unless otherwise specified）
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 IAS a2
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Avalanche Current Power Dissipation...
