CS12N65A8H Datasheet - Huajing Microelectronics

CS12N65A8H Silicon N-Channel Power MOSFET

CS12N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 12 140 0.54 switching performance and enhance the avalanche energy. The transistor can be used in various power s.

CS12N65A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS12N65A8H-HuajingMicroelectronics.pdf