CS12N65A8H
Overview
： CS12N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 650 12 140 0.54 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
