CS12N60FA9HD mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy T.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
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CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 12 55 0.5
switching performance and enhance the avalanche ener.
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