CS10N80FA9D Datasheet - Huajing Microelectronics

CS10N80FA9D Silicon N-Channel Power MOSFET

CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS10N80FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD

CS10N80FA9D-HuajingMicroelectronics.pdf