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CS10N80FA9D Datasheet

Manufacturer: Huajing Microelectronics
CS10N80FA9D datasheet preview

Datasheet Details

Part number CS10N80FA9D
Datasheet CS10N80FA9D-HuajingMicroelectronics.pdf
File Size 546.41 KB
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
CS10N80FA9D page 2 CS10N80FA9D page 3

CS10N80FA9D Overview

: CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...

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