CS10N80FA9D
CS10N80FA9D is Silicon N-Channel Power MOSFET manufactured by Huajing Microelectronics.
Description
：
CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
800 10 60 0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard.
Features
： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65n C) l Low Reverse transfer capacitances(Typical: 25p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS EAR a1 IAR a1 dv/dt a2
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed...
