Datasheet4U Logo Datasheet4U.com

CS10N80FA9D - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number CS10N80FA9D
Manufacturer Huajing Microelectronics
File Size 546.41 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10N80FA9D Datasheet

Full PDF Text Transcription for CS10N80FA9D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS10N80FA9D. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS10N80F A9D ○R General Description: CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

View more extracted text
nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER.