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CS10N65FA9R Datasheet, Huajing Microelectronics

CS10N65FA9R mosfet equivalent, silicon n-channel power mosfet.

CS10N65FA9R Avg. rating / M : 1.0 rating-116

datasheet Download (Size : 273.10KB)

CS10N65FA9R Datasheet
CS10N65FA9R
Avg. rating / M : 1.0 rating-116

datasheet Download (Size : 273.10KB)

CS10N65FA9R Datasheet

Features and benefits

l Fast Switching l Low ON Resistance(Rdson≤1.0Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche ene.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID .

Description

CS10N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

Image gallery

CS10N65FA9R Page 1 CS10N65FA9R Page 2 CS10N65FA9R Page 3

TAGS

CS10N65FA9R
Silicon
N-Channel
Power
MOSFET
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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