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Silicon N-Channel Power MOSFET
CS10N60 A8R
○R
General Description：
CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 V 10 A 130 W 0.68 Ω
l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS10N60A8R Datasheet
