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CS10N60A8R Datasheet Huajing Microelectronics

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Huajing Microelectronics · CS10N60A8R File Size : 265.92KB · 3 hits

Features and Benefits

l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 10.

CS10N60A8R CS10N60A8R CS10N60A8R
TAGS
Silicon
N-Channel
Power
MOSFET
CS10N60A8HD
CS10N60A8R
CS10N60

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