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CS10N60A8R Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

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Datasheet Details

Part number CS10N60A8R
Manufacturer Huajing Microelectronics
File Size 265.92 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10N60A8R Datasheet

General Description

： CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-220AB, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS10N60 A8R ○R General.

Key Features

  • l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 10 A 130 W 0.68 Ω l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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