CS10N60A8R mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 V 10 A 130 W 0.68 Ω
l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer ca.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS10N60 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.
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