Silicon N-Channel Power MOSFET
CS10N50 A8R
○R
General Description：
CS10N50 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
500
10
130
0.5
l Low ON Resistance(Rdson≤0.75Ω)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:8.4pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
500
10
6.3
40
±30
580
5.0
130
1.04
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
