CS1010EA8 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS1010EA8
Manufacturer: Huajing Microelectronics
File Size: 414.67 KB
Datasheet: CS1010EA8-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS1010EA8 Product details

Description

CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy..

Features

l Fast Switching l Low ON Resistance(Rdson≤12mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test VDSS ID PD (TC=25℃) RDS(ON)Typ 60 V 120 A 230 W 7.5 mΩ.

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Silicon N-Channel Power MOSFET Huajing Microelectronics

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