CS1010EA8 Datasheet - Huajing Microelectronics

CS1010EA8 Silicon N-Channel Power MOSFET

CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS1010EA8 Features

* l Fast Switching l Low ON Resistance(Rdson≤12mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test VDSS ID PD (TC=25℃) RDS(ON)Typ 60 V 120 A 230 W 7.5 mΩ Applications： Power switch circuit of adaptor and charger. Ab

CS1010EA8-HuajingMicroelectronics.pdf