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Huajing Microelectronics

CS100N03FB9 Datasheet Preview

CS100N03FB9 Datasheet

Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET
CS100N03F B9
R
General Description
CS100N03F B9, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25)
RDS(ON)Typ
30
100
40
4.0
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The
package form is TO-220F, which accords with the RoHS
standard.
Features
l Trench FET Power MOSFET
l Low ON Resistance(Rdson5.3m)
l Low Gate Charge (Typical Data:68nC)
l Low Reverse transfer capacitances(Typical:300pF)
l 100% Single Pulse avalanche energy Test
Applications
UPS,DC Motor Control and Class D Amplifier.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
30
100
75
400
±20
200
31
2.5
5
40
0.27
TJTstg
TL
Operating Junction and Storage Temperature
Range
Maximum Temperature for Soldering
17555 to 175
300
V
A
W
m
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01




Huajing Microelectronics

CS100N03FB9 Datasheet Preview

CS100N03FB9 Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

CS100N03F B9
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown
Vo l t a g e
Bvdss Temperature Coefficient
Drain to Source Leakage Current
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 30V, VGS= 0V,
Ta = 25
VDS =24V, VGS= 0V,
Ta = 125
Gate to Source Forward Leakage VGS =+20V
Gate to Source Reverse Leakage VGS =-20V
Rating
Min.
Typ.
Max
.
30 -- --
-- 0.08 --
-- -- 1
-- -- 10
Units
V
V/
µA
-- -- 100 nA
-- -- -100 nA
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
V G S = 1 0 V, ID = 5 0 A
V G S = 5 V, ID = 4 0 A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
-- 4.0 5.3
4.5 8.0
1.0 3.0
Units
m
m
V
Dynamic Characteristics
Symbol
Parameter
gfs
Ciss
Coss
Crss
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =100A
VGS = 0V VDS =25V
f = 1.0MHz
Test Conditions
ID =30A VDD = 15V
VGS = 10V RG = 12
ID =30A VDD =15V
VGS = 10V
Rating
Min. Typ. Max.
-- 100 --
-- 3500 --
-- 350 --
-- 300 --
Units
S
pF
Rating
Min. Typ. Max.
-- 12 --
-- 65 --
-- 125 --
-- 100 --
-- 68 --
-- 8 --
-- 18 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01


Part Number CS100N03FB9
Description Silicon N-Channel Power MOSFET
Maker Huajing Microelectronics
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