BT50N60ANF igbt equivalent, silicon fs planar igbt.
l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V
@ IC =50A and TC = 25°C l Extremely enhanced avalanche capability.
Aircondition、Welding、UPS…
Absolute Maximum Ratings
（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VCES
Co.
Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot TC=25℃）
VCE(SAT)
600 50 312 1.7
V A .
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