BT30N60ANF igbt equivalent, silicon fs planar igbt.
l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.0V
@ IC = 30A and TC = 25°C l Extremely enhanced avalanche capabilit.
Aircondition、Welding、UPS…
Absolute Maximum Ratings
（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VCES
Co.
Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot （TC=25℃）
VCE(SAT)
600 30 312 2.0
V A .
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