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BT15N120ANF Datasheet, Huajing Microelectronics

BT15N120ANF igbt equivalent, silicon fs planar igbt.

BT15N120ANF Avg. rating / M : 1.0 rating-11

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BT15N120ANF Datasheet

Features and benefits

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capabilit.

Application

Power switch circuit of induction cooker(IH). Absolute Maximum Ratings (Tc= 25℃ unless otherwise specified): Symbol .

Description

Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 25 186 2.2 V A W V F.

Image gallery

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TAGS

BT15N120ANF
Silicon
Planar
IGBT
BT15N60A0F
BT15N60A8F
BT15N60A9F
Huajing Microelectronics

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