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CS20N50ANH Datasheet Silicon N-channel Power MOSFET

Manufacturer: Huajing Discrete Devices

Overview: Silicon N-Channel Power MOSFET ○R CS20N50 ANH General.

General Description

: VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-3P (N), which accords with the RoHS standard..

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test.

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