CS12N65FA9H - Silicon N-Channel Power MOSFET

Huajin Discrete Devices

The CS12N65FA9H by Huajin Discrete Devices is a Silicon N-Channel Power MOSFET. Below is the official datasheet preview.

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CS12N65FA9H Silicon N-Channel Power MOSFET by Huajin Discrete Devices - Datasheet Preview — Official preview page of the **CS12N65FA9H** Silicon N-Channel Power MOSFET datasheet (Huajin Discrete Devices).

Datasheet Details

Part number	CS12N65FA9H
Manufacturer	Huajin Discrete Devices
File Size	222.35 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS12N65FA9H-HuajinDiscreteDevices.pdf
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CS12N65FA9H Product details

Description

CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test.

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Published: Jun 13, 2015 |