HXY5N10MI mosfet equivalent, n-channel enhancement mode mosfet.
VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Orde.
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.
The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
V.
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