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HXY5N10MI Datasheet, HuaXuanYang

HXY5N10MI mosfet equivalent, n-channel enhancement mode mosfet.

HXY5N10MI Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 3.07MB)

HXY5N10MI Datasheet

Features and benefits

VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Package Marking and Orde.

Application

that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.

Description

The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V.

Image gallery

HXY5N10MI Page 1 HXY5N10MI Page 2 HXY5N10MI Page 3

TAGS

HXY5N10MI
N-Channel
Enhancement
Mode
MOSFET
HuaXuanYang

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