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HMC999 - GaN MMIC 10 WATT POWER AMPLIFIER

General Description

The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz.

The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply.

Key Features

  • High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip.
  • Test Instrumentation.
  • Military Communications.
  • Jammers and Decoys.
  • Radar, EW & ECM Subsystems.
  • Space Functional Diagram General.

📥 Download Datasheet

Datasheet Details

Part number HMC999
Manufacturer Hittite
File Size 680.72 KB
Description GaN MMIC 10 WATT POWER AMPLIFIER
Datasheet download datasheet HMC999 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications The HMC999 is ideal for: Features High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip • Test Instrumentation • Military Communications • Jammers and Decoys • Radar, EW & ECM Subsystems • Space Functional Diagram General Description The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz. The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain compression while requiring 1100 mA from a +48 V supply.