Hitachi Power Semiconductor Device Electronic Components Datasheet

PM45502C Datasheet

Silicon N-Channel Power MOS FET Module

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PM45502C

Silicon N-Channel Power MOS FET Module

Application

High Speed Power Switching

Features

• Equipped with Power MOS FET

• Low on-resistance

• High speed switching

• Low drive current

• Wide area of safe operation

• Inherent parallel diode between source and drain

• Isolated base from Terminal

• Suitable for motor driver, switching regulator and etc.

November 1996

DataSheet4 U .com

Hitachi Power Semiconductor Device Electronic Components Datasheet

PM45502C Datasheet

Silicon N-Channel Power MOS FET Module

No Preview Available !

www.DataSheet4U.com

PM45502C

Outline

LF-C

Equivalent Circuit

S2 G2

No Electrode

S1 Source 1

D1 Drain 1

S2 Source 2

D2 Drain 2

G1 Gate 1

S1 Source 1

G2 Gate 2

S2 Source 2

Terminals

M5 screw

#110

Remarks

Power terminal

Signal terminals

Absolute Maximum Ratings (Ta = 25°C) (Per FET chip)

Item

Drain source voltage

Gate source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Body to drain diode reverse drain peak current

Channel dissipation

Channel temperature

Storage temperature

Insulation dielectric

Notes 1. Value at Tc = 25°C

2. Base to terminals AC minute

Symbol

VDSS

VGSS

ID(peak)

IDR

IDR(peak)

Pch*1

Tch

Tstg

Visol*2

Rating

450

±20

100

300

150

–45 to +125

2000

Unit

°C

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PM45502C Datasheet

Silicon N-Channel Power MOS FET Module

PM45502C Datasheet

Silicon N-Channel Power MOS FET Module

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