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K1342 - 2SK1342

Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K134 2SK134
K1340 2SK1340
K1341 2SK1341
K1306 2SK1306
K1307 2SK1307

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1342 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% www.DataSheet4U.com 2.
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