Datasheet4U Logo Datasheet4U.com

HN58C1001 - 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

Description

The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit.

It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology.

Features

  • Single supply: 5.0 V ± 10%.
  • Access time: 150 ns (max).
  • Power dissipation  Active: 20 mW/MHz, (typ)  Standby: 110 µW (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (128 bytes): 10 ms (max).
  • Data polling and RDY/Busy.
  • Data protection circuit on power on/off.
  • Conforms to JEDEC byte-wide standard.
  • Reliable CMOS with MNOS cell technology.
  • 10.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HN58C256 EEPROM CMOS Hitachi
HN58C256P-20 CMOS 256K EEPROM ETC
HN58C257A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function Hitachi
HN58064 8192-Word x 8-Bit Electrically EPROM Hitachi
HN58V257A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function Hitachi

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function
HN58C65 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
HN58S256A 256 k EEPROM (32-kword x 8-bit)
HN58S65A 64 k EEPROM (8-kword x 8-bit) Ready/Busy function
HN58V1001 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HN58C1001 Series 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function ADE-203-028G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster. Features • Single supply: 5.