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HL1326MF Datasheet InGaAsP Laser Diodes

Manufacturer: Hitachi Semiconductor (now Renesas)

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General Description

The HL1326MF is a 1.3 µm InGaAsP Fabry Perot laser diode with a multi-quantum well (MQW) structure.

It is suitable as a light source in short and medium range fiberoptic communication systems and other applied optical equipment.

It has high optical power with low drive current and wide operating temperature range (–40 to +85°C).

Overview

HL1326MF InGaAsP Laser Diodes www.DataSheet4U.com.

Key Features

  • Wide operating temperature range: Topr =.
  • 40 to +85°C.
  • High output power: 10 mW (Pulse) 5 mW (CW).
  • Low operating current: Iop (PO = 5 mW) = 20 mA (Typ @TC = 25°C) Iop (PO = 5 mW) = 40 mA (Typ @TC = 85°C) 207 HL1326MF Absolute Maximum Ratings (TC = 25°C) Item Optical output power Symbol PO Rated Value 10 (Pulse).
  • 5 (CW) LD reverse voltage PD reverse voltage PD forward current www. DataSheet4U. com 1 Unit mW mW V V mA °C °C VR (LD) VR (PD) I F (PD) Topr T.

More Datasheets from Hitachi Semiconductor (now Renesas)

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