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HAT2020R
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-439 J (Z) 11th. Edition February 1999 Features
• • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT2020R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg
Note2 Note1
Ratings 30 ± 20 8 64 8 2.5 150 – 55 to + 150
Unit V V A A A W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.
HAT2020R Datasheet
