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2SD2101
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter
12 3
3 kΩ (Typ)
150 Ω (Typ) 3
2SD2101
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Rating 200 200 7 10 15 2 30 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 — — 1500 — — — — Typ — — — — — — — — — — — Max — — — — 10 50 — 1.5 3.0 2.0 3.5 V V Unit V V V V µA Test conditions I C = 0.
D2101 Datasheet
