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Hitachi Power Semiconductor Device Electronic Components Datasheet

C4747 Datasheet

2SC4747

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2SC4747
Silicon NPN Triple Diffused
Application
Character display horizontal deflection output
Feature
High breakdown voltage
VCBO = 1500 V
High speed switching
tf 0.3 µs
Outline
TO-3PFM
1
2
3
1. Base
2. Collector
3. Emitter


Hitachi Power Semiconductor Device Electronic Components Datasheet

C4747 Datasheet

2SC4747

No Preview Available !

2SC4747
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(surge)
PC*1
Tj
Tstg
Ratings
1500
800
6
10
20
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
800
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICES
hFE
VCE(sat)
Base to emitter saturation
voltage
VBE(sat)
Fall time
tf
Typ
Max
Unit
V
Test conditions
IC = 10 mA, RBE = _
—V
IE = 10 mA, IC = 0
500 µA
30
5V
VCE = 1500 V, RBE = 0
VCE = 5 V, IC = 1 A
IC = 8 A, IB = 1.6 A
1.5 V
IC = 8 A, IB = 1.6 A
0.3 µs
ICP = 7 A, IB1 = 1.4 A
2


Part Number C4747
Description 2SC4747
Maker Hitachi Semiconductor
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C4747 Datasheet PDF






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