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Hitachi Power Semiconductor Device Electronic Components Datasheet

C4367 Datasheet

2SC4367

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2SC4367
Silicon NPN Epitaxial
Application
High Frequency amplifier
Outline
TO-92MOD
3
2
1
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

C4367 Datasheet

2SC4367

No Preview Available !

2SC4367
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC (peak)
PC
Tj
Tstg
Ratings
30
20
3
100
200
600
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I CBO
hFE
VCE(sat)
fT
Cob
Min
30
20
3
40
600
Typ Max Unit
——V
——V
——V
— 1.0 µA
——
— 1.0 V
1000
1.3
MHz
pF
Test conditions
IC = 10 µA, IE = 0
IC = 3 mA, RBE =
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 10 V, IC = 10 mA
IC = 20 mA, IB = 4 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
2


Part Number C4367
Description 2SC4367
Maker Hitachi Semiconductor
PDF Download

C4367 Datasheet PDF






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