C4367 Datasheet | Hitachi Semiconductor

2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C (peak) PC Tj Tstg Ratings 30 20 3 100 200 600 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE VCE(sat) f T Cob Min 30 20 3 - 40 - 600 - Typ - - - - - - 1000 1.3 Max - - - 1.0 - 1.0 - - V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 m A I C = 20 m A, IB = 4 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) 24 140 120 100 IB = 20 µA 50 100 150 Ambient Temperature Ta...