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Hitachi Power Semiconductor Device Electronic Components Datasheet

C4046 Datasheet

2SC4046

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2SC4046
Silicon NPN Epitaxial
Application
High voltage amplifier
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
PC * 1
Tj
Tstg
Ratings
120
120
5
0.2
8
150
–55 to +150
Unit
V
V
V
A
W
°C
°C


Hitachi Power Semiconductor Device Electronic Components Datasheet

C4046 Datasheet

2SC4046

No Preview Available !

2SC4046
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
120
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
5
Collector cutoff current
ICBO — —
DC current transfer ratio
hFE*1
250 —
Base to emitter voltage
VBE — —
Collector to emitter saturation VCE(sat)
voltage
Gain bandwidth product
fT
— 350
Collector output capacitance Cob — 3.5
Note: 1. The 2SC4046 is grouped by hFE as follows.
Max Unit Test conditions
—V
IC = 10 µA, IE = 0
—V
IC = 1 mA, RBE =
—V
IE = 10 µA, IC = 0
10 µA
800
1.0 V
1.0 V
VCB = 80 V, IE = 0
VCE = 5 V, IC = 10 mA
IC = 200 mA, IB = 20 mA
— MHz VCE = 10 V, IC = 50 mA
— pF VCB = 30 V, f = 1 MHz, IE = 0
Grade
hFE
DE
250 to 500 400 to 800
Maximum Collector Dissipation Curve
12
10
8
6
4
2
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
1.0
Single Pulse
Ta = 25°C
(25 V, 0.4 A)
(80 V, 0.125 A)
DC Operation
0.1 TC = 25°C
(80 V, 0.1 A)
(120 V, 0.055 A)
(120 V, 0.05 A)
0.01
1
10 100 1,000
Collector to emitter Voltage VCE (V)
2


Part Number C4046
Description 2SC4046
Maker Hitachi Semiconductor
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C4046 Datasheet PDF






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