Other Datasheets by Hitachi Semiconductor (now Renesas)
Part Number
Description
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2SC3652
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
TO-126 MOD
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg
Ratings 30 20 3.5 0.3 0.5 0.
C3652 Datasheet
