• Part: 6AM13
  • Description: Silicon N-Channel/P-Channel Complementary Power MOS FET Array
  • Manufacturer: Hitachi Semiconductor
  • Size: 65.22 KB
6AM13 Datasheet (PDF) Download
Hitachi Semiconductor
6AM13

Key Features

  • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = -10 V, I D = -5 A
  • Capable of 4 V gate drive
  • Low drive current
  • High speed switching
  • High density mounting
  • Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G
  • 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7,
  • N-ch Drain P-ch Drain 4, 6,
  • P-ch Gate 5,
  • P-ch Source