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Hitachi Power Semiconductor Device Electronic Components Datasheet

6AM13 Datasheet

Silicon N-Channel/P-Channel Complementary Power MOS FET Array

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6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
Application
High speed power switching
Features
Low on-resistance
N-channel: RDS(on) 0.075 , VGS = 10 V, ID = 5 A
P-channel: RDS(on) 0.12 , VGS = –10 V, ID = –5 A
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for H-bridged motor driver
ADE-208-1217 (Z)
1st. Edition
Mar. 2001


Hitachi Power Semiconductor Device Electronic Components Datasheet

6AM13 Datasheet

Silicon N-Channel/P-Channel Complementary Power MOS FET Array

No Preview Available !

6AM13
Outline
SP-12TA
Pch
4G
Nch
2G
5 12
SS
6 11
GG
D3 D7
89
GG
S
1
D 10
1 2 3 4 5 6 7 8 9101112
1. N-ch Source
2, 8, 9 N-ch Gate
3, 7, 10. N-ch Drain
P-ch Drain
4, 6, 11. P-ch Gate
5, 12. P-ch Source
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. 6 devices operation
Ratings
Symbol
Nch Pch
VDSS
60
VGSS
±20
ID 10
I *1
D(pulse)
40
IDR 10
Pch (Tc = 25°C)*2 42
–60
±20
–10
–40
–10
Pch*2
4.8
Tch 150
Tstg –55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
2


Part Number 6AM13
Description Silicon N-Channel/P-Channel Complementary Power MOS FET Array
Maker Hitachi Semiconductor
Total Page 12 Pages
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