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3SK309 Datasheet Uhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd.

Key Features

  • Capable of low voltage operation (VDS = 1.5 to 3 V).
  • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz).
  • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S.

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