Capable of low voltage operation (VDS = 1.5 to 3 V).
Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz).
High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK.
4
2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain
3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S.
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3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd. Edition Features
• Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain
3SK309
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 –4 –4 18 100 125 –55 to +125 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate 1 to cutoff current Gate 2 to cutoff current Symbol I G1SS I G2SS Min — — –0.2 –0.
3SK309 Datasheet
