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3SK186 - Silicon N-Channel Dual Gate MOS FET

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3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±10 ±10 35 150 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS Min 12 ±10 ±10 — — +0.5 +0.5 0 15 — — — 16 — Typ — — — — — — — — — 1.7 1.0 0.017 19 3.